TPH3212PS

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Overview of TPH3212PS

Part NumberTPH3212PS
ManufacturerTransphorm
DescriptionGANFET N-CH 650V 27A TO220AB
DatasheetsDownload TPH3212PS Datasheet PDFPDF Icon
Price for TPH3212PS

Specification of TPH3212PS

Status
Obsolete
Package
Tube
Supplier
Transphorm
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
72mOhm @ 17A, 8V
Vgs(th) (Max) @ Id
2.6V @ 400uA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 8 V
Vgs (Max)
18V
Input Capacitance (Ciss) (Max) @ Vds
1130 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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