TPS1100DR

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Overview of TPS1100DR

Part NumberTPS1100DR
ManufacturerTexas Instruments
DescriptionMOSFET P-CH 15V 1.6A 8SOIC
DatasheetsDownload TPS1100DR Datasheet PDFPDF Icon
Price for TPS1100DR

Specification of TPS1100DR

Status
Active
Package
Tape & Reel (TR),Bulk
Supplier
Texas Instruments,Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
15 V
Current - Continuous Drain (Id) @ 25C
1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 10V
Rds On (Max) @ Id, Vgs
180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.45 nC @ 10 V
Vgs (Max)
+2V, -15V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
791mW (Ta)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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