TSM170N06CH

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Overview of TSM170N06CH

Part NumberTSM170N06CH
ManufacturerTaiwan Semiconductor
Description60V, 38A, SINGLE N-CHANNEL POWER
DatasheetsDownload TSM170N06CH Datasheet PDFPDF Icon
Price for TSM170N06CH

Specification of TSM170N06CH

Status
Active
Package
Tube
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
46W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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