TSM2N7000KCT A3G

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Overview of TSM2N7000KCT A3G

Part NumberTSM2N7000KCT A3G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CHANNEL 60V 300MA TO92
Price for TSM2N7000KCT A3G

Specification of TSM2N7000KCT A3G

Status
Discontinued at Digi-Key
Package
Cut Tape (CT),Tape & Box (TB)
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
0.4 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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