TSM2NB65CH X0G

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Overview of TSM2NB65CH X0G

Part NumberTSM2NB65CH X0G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CHANNEL 650V 2A TO251
Price for TSM2NB65CH X0G

Specification of TSM2NB65CH X0G

Status
Obsolete
Package
Tube
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
390 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Stub Leads, IPak

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