TSM300NB06CR RLG

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Overview of TSM300NB06CR RLG

Part NumberTSM300NB06CR RLG
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 60V 6A/27A 8PDFN
DatasheetsDownload TSM300NB06CR RLG Datasheet PDFPDF Icon
Price for TSM300NB06CR RLG

Specification of TSM300NB06CR RLG

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
6A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1110 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 56W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (5.2x5.75)
Package / Case
8-PowerLDFN

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