UPA2816T1S-E2-AT

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Overview of UPA2816T1S-E2-AT

Part NumberUPA2816T1S-E2-AT
ManufacturerRenesas Electronics America
DescriptionMOSFET P-CH 30V 17A 8HWSON
DatasheetsDownload UPA2816T1S-E2-AT Datasheet PDFPDF Icon
Price for UPA2816T1S-E2-AT

Specification of UPA2816T1S-E2-AT

Status
Active
Package
Tape & Reel (TR)
Supplier
Renesas Electronics America Inc
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
33.4 nC @ 10 V
Vgs (Max)
+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HWSON (3.3x3.3)
Package / Case
8-PowerWDFN

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