WNSC5D10650W6Q

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Overview of WNSC5D10650W6Q

Part NumberWNSC5D10650W6Q
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARB 650V 10A TO247-2
Price for WNSC5D10650W6Q

Specification of WNSC5D10650W6Q

Status
Active
Package
Tube
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 650 V
Capacitance @ Vr, F
323pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
TO-247-2
Operating Temperature - Junction
-55C ~ 175C

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