WNSC6D166506Q

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Overview of WNSC6D166506Q

Part NumberWNSC6D166506Q
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARB 650V 16A TO220AC
DatasheetsDownload WNSC6D166506Q Datasheet PDFPDF Icon
Price for WNSC6D166506Q

Specification of WNSC6D166506Q

Status
Active
Package
Tube
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
16A
Voltage - Forward (Vf) (Max) @ If
1.45 V @ 16 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
80 A @ 650 V
Capacitance @ Vr, F
780pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220AC
Operating Temperature - Junction
175C

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