BSC120N03MSGATMA1

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Overview of BSC120N03MSGATMA1

Part NumberBSC120N03MSGATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 30V 11A/39A TDSON
DatasheetsDownload BSC120N03MSGATMA1 Datasheet PDFPDF Icon
Price for BSC120N03MSGATMA1

Specification of BSC120N03MSGATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
11A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 28W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-5
Package / Case
8-PowerTDFN

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