BSM180D12P2C101

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Overview of BSM180D12P2C101

Part NumberBSM180D12P2C101
ManufacturerROHM Semiconductor
DescriptionMOSFET 2N-CH 1200V 180A MODULE
DatasheetsDownload BSM180D12P2C101 Datasheet PDFPDF Icon
Price for BSM180D12P2C101

Specification of BSM180D12P2C101

Status
Active
Package
Bulk
Supplier
Rohm Semiconductor
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
204A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
23000pF @ 10V
Power - Max
1130W
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
-
Package / Case
Module
Supplier Device Package
Module

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