EPC2106

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Overview of EPC2106

Part NumberEPC2106
ManufacturerEPC
DescriptionGANFET TRANS SYM 100V BUMPED DIE
DatasheetsDownload EPC2106 Datasheet PDFPDF Icon
Price for EPC2106

Specification of EPC2106

Status
Active
Series
eGaN®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
EPC
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
1.7A
Rds On (Max) @ Id, Vgs
70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id
2.5V @ 600A
Gate Charge (Qg) (Max) @ Vgs
0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
75pF @ 50V
Power - Max
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die

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