FCP600N60Z

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Overview of FCP600N60Z

Part NumberFCP600N60Z
Manufactureronsemi
DescriptionMOSFET N-CH 600V 7.4A TO220-3
DatasheetsDownload FCP600N60Z Datasheet PDFPDF Icon
Price for FCP600N60Z

Specification of FCP600N60Z

Status
Not For New Designs
Series
SuperFET® II
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1120 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

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