FQB8N90CTM

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Overview of FQB8N90CTM

Part NumberFQB8N90CTM
ManufacturerFairchild Semiconductor
DescriptionMOSFET N-CH 900V 6.3A D2PAK
DatasheetsDownload FQB8N90CTM Datasheet PDFPDF Icon
Price for FQB8N90CTM

Specification of FQB8N90CTM

Status
Active
Series
QFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25C
6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9Ohm @ 3.15A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
171W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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