FQN1N60CTA

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Overview of FQN1N60CTA

Part NumberFQN1N60CTA
ManufacturerFairchild Semiconductor
DescriptionSMALL SIGNAL FIELD-EFFECT TRANSI
DatasheetsDownload FQN1N60CTA Datasheet PDFPDF Icon
Price for FQN1N60CTA

Specification of FQN1N60CTA

Status
Active
Series
QFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11.5Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta), 3W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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