G3R20MT17K

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Overview of G3R20MT17K

Part NumberG3R20MT17K
ManufacturerGeneSiC Semiconductor
DescriptionSIC MOSFET N-CH 124A TO247-4
Price for G3R20MT17K

Specification of G3R20MT17K

Status
Active
Series
G3R™
Package
Tube
Supplier
GeneSiC Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25C
124A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
26mOhm @ 75A, 15V
Vgs(th) (Max) @ Id
2.7V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
400 nC @ 15 V
Vgs (Max)
15V
Input Capacitance (Ciss) (Max) @ Vds
10187 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
809W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4

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