G3S12010H

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Overview of G3S12010H

Part NumberG3S12010H
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIC 1.2KV 16.5A TO220F
DatasheetsDownload G3S12010H Datasheet PDFPDF Icon
Price for G3S12010H

Specification of G3S12010H

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
16.5A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 1200 V
Capacitance @ Vr, F
765pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack
Supplier Device Package
TO-220F
Operating Temperature - Junction
-55C ~ 175C

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