G4S06510DT

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Overview of G4S06510DT

Part NumberG4S06510DT
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIL CARBIDE 650V 32A TO263
DatasheetsDownload G4S06510DT Datasheet PDFPDF Icon
Price for G4S06510DT

Specification of G4S06510DT

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
32A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 650 V
Capacitance @ Vr, F
550pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263
Operating Temperature - Junction
-55C ~ 175C

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