G5S06508QT

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Overview of G5S06508QT

Part NumberG5S06508QT
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIL CARB 650V 44.9A 4DFN
DatasheetsDownload G5S06508QT Datasheet PDFPDF Icon
Price for G5S06508QT

Specification of G5S06508QT

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
44.9A
Voltage - Forward (Vf) (Max) @ If
1.5 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 650 V
Capacitance @ Vr, F
550pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
4-PowerTSFN
Supplier Device Package
4-DFN (8x8)
Operating Temperature - Junction
-55C ~ 175C

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