G5S06510QT

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Overview of G5S06510QT

Part NumberG5S06510QT
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIL CARBIDE 650V 53A 4DFN
DatasheetsDownload G5S06510QT Datasheet PDFPDF Icon
Price for G5S06510QT

Specification of G5S06510QT

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
53A
Voltage - Forward (Vf) (Max) @ If
1.5 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 650 V
Capacitance @ Vr, F
645pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
4-PowerTSFN
Supplier Device Package
4-DFN (8x8)
Operating Temperature - Junction
-55C ~ 175C

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