GAN140-650FBEZ

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Overview of GAN140-650FBEZ

Part NumberGAN140-650FBEZ
ManufacturerNexperia
Description650 V, 140 MOHM GALLIUM NITRIDE
DatasheetsDownload GAN140-650FBEZ Datasheet PDFPDF Icon
Price for GAN140-650FBEZ

Specification of GAN140-650FBEZ

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Nexperia USA Inc.
FET Type
P-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V
Rds On (Max) @ Id, Vgs
140mOhm @ 5A, 6V
Vgs(th) (Max) @ Id
2.5V @ 17.2mA
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 6 V
Vgs (Max)
+7V, -1.4V
Input Capacitance (Ciss) (Max) @ Vds
125 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
113W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
DFN5060-5
Package / Case
8-PowerVDFN

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