GT009N04D5

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Overview of GT009N04D5

Part NumberGT009N04D5
ManufacturerGoford Semiconductor
DescriptionN40V,100A,RD<1.3M@10V,VTH1.0V~2.
Price for GT009N04D5

Specification of GT009N04D5

Status
Active
Package
Tape & Reel (TR)
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
45 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6864 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-DFN (4.9x5.75)
Package / Case
8-PowerTDFN

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