GT10G131(TE12L,Q)

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Overview of GT10G131(TE12L,Q)

Part NumberGT10G131(TE12L,Q)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionIGBT 400V 1W 8-SOIC
DatasheetsDownload GT10G131(TE12L,Q) Datasheet PDFPDF Icon
Price for GT10G131(TE12L,Q)

Specification of GT10G131(TE12L,Q)

Status
Obsolete
Package
Tape & Reel (TR)
Supplier
Toshiba Semiconductor and Storage
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
400 V
Current - Collector (Ic) (Max)
-
Current - Collector Pulsed (Icm)
200 A
Vce(on) (Max) @ Vge, Ic
2.3V @ 4V, 200A
Power - Max
1 W
Switching Energy
-
Input Type
Standard
Gate Charge
-
Td (on/off) @ 25C
3.1s/2s
Test Condition
-
Reverse Recovery Time (trr)
-
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.173", 4.40mm Width)
Supplier Device Package
8-SOP (5.5x6.0)

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