GT30J121(Q)

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Overview of GT30J121(Q)

Part NumberGT30J121(Q)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionIGBT 600V 30A 170W TO3PN
DatasheetsDownload GT30J121(Q) Datasheet PDFPDF Icon
Price for GT30J121(Q)

Specification of GT30J121(Q)

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
30 A
Current - Collector Pulsed (Icm)
60 A
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 30A
Power - Max
170 W
Switching Energy
1mJ (on), 800J (off)
Input Type
Standard
Gate Charge
-
Td (on/off) @ 25C
90ns/300ns
Test Condition
300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P(N)

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