IMW120R040M1HXKSA1

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Overview of IMW120R040M1HXKSA1

Part NumberIMW120R040M1HXKSA1
ManufacturerInfineon Technologies
DescriptionSIC DISCRETE
DatasheetsDownload IMW120R040M1HXKSA1 Datasheet PDFPDF Icon
Price for IMW120R040M1HXKSA1

Specification of IMW120R040M1HXKSA1

Status
Active
Series
CoolSiC™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
54.4mOhm @ 19.3A, 18V
Vgs(th) (Max) @ Id
5.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 18 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1620 nF @ 25 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3

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