IPB260N06N3G

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Overview of IPB260N06N3G

Part NumberIPB260N06N3G
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload IPB260N06N3G Datasheet PDFPDF Icon
Price for IPB260N06N3G

Specification of IPB260N06N3G

Status
Active
Series
OptiMOS™3
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25.7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id
4V @ 11A
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
36W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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