IPB320P10LMATMA1

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Overview of IPB320P10LMATMA1

Part NumberIPB320P10LMATMA1
ManufacturerInfineon Technologies
DescriptionTRENCH >=100V PG-TO263-3
DatasheetsDownload IPB320P10LMATMA1 Datasheet PDFPDF Icon
Price for IPB320P10LMATMA1

Specification of IPB320P10LMATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
6.5A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
32mOhm @ 54A, 10V
Vgs(th) (Max) @ Id
2V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs
219 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
11000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 300W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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