IPB320N20N3GATMA1

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Overview of IPB320N20N3GATMA1

Part NumberIPB320N20N3GATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 200V 34A D2PAK
DatasheetsDownload IPB320N20N3GATMA1 Datasheet PDFPDF Icon
Price for IPB320N20N3GATMA1

Specification of IPB320N20N3GATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
32mOhm @ 34A, 10V
Vgs(th) (Max) @ Id
4V @ 90A
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2350 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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