IPD50R1K4CEAUMA1

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Overview of IPD50R1K4CEAUMA1

Part NumberIPD50R1K4CEAUMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 500V 3.1A TO252-3
DatasheetsDownload IPD50R1K4CEAUMA1 Datasheet PDFPDF Icon
Price for IPD50R1K4CEAUMA1

Specification of IPD50R1K4CEAUMA1

Status
Not For New Designs
Series
CoolMOS™ CE
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
Infineon Technologies,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id
3.5V @ 70A
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
178 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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