IPD50R399CPBTMA1

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Overview of IPD50R399CPBTMA1

Part NumberIPD50R399CPBTMA1
ManufacturerInfineon Technologies
DescriptionLOW POWER_LEGACY
DatasheetsDownload IPD50R399CPBTMA1 Datasheet PDFPDF Icon
Price for IPD50R399CPBTMA1

Specification of IPD50R399CPBTMA1

Status
Obsolete
Series
CoolMOS™ CP
Package
Tape & Reel (TR),Bulk
Supplier
Infineon Technologies,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 330A
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-313
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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