IPI08CNE8N G

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Overview of IPI08CNE8N G

Part NumberIPI08CNE8N G
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 85V 95A TO262-3
DatasheetsDownload IPI08CNE8N G Datasheet PDFPDF Icon
Price for IPI08CNE8N G

Specification of IPI08CNE8N G

Status
Obsolete
Series
OptiMOS™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
85 V
Current - Continuous Drain (Id) @ 25C
95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.4mOhm @ 95A, 10V
Vgs(th) (Max) @ Id
4V @ 130A
Gate Charge (Qg) (Max) @ Vgs
99 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6690 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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