IPU50R950CEBTMA1

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Overview of IPU50R950CEBTMA1

Part NumberIPU50R950CEBTMA1
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload IPU50R950CEBTMA1 Datasheet PDFPDF Icon
Price for IPU50R950CEBTMA1

Specification of IPU50R950CEBTMA1

Status
Active
Series
CoolMOS CE™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id
3.5V @ 100A
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
231 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
34W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-345
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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