IRC644PBF

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Overview of IRC644PBF

Part NumberIRC644PBF
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 250V 14A TO220-5
DatasheetsDownload IRC644PBF Datasheet PDFPDF Icon
Price for IRC644PBF

Specification of IRC644PBF

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
FET Feature
Current Sensing
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-5
Package / Case
TO-220-5

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