IRF830ASPBF

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Overview of IRF830ASPBF

Part NumberIRF830ASPBF
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 500V 5A D2PAK
DatasheetsDownload IRF830ASPBF Datasheet PDFPDF Icon
Price for IRF830ASPBF

Specification of IRF830ASPBF

Status
Active
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 74W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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