IRF9Z14PBF

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Overview of IRF9Z14PBF

Part NumberIRF9Z14PBF
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 60V 6.7A TO220AB
DatasheetsDownload IRF9Z14PBF Datasheet PDFPDF Icon
Price for IRF9Z14PBF

Specification of IRF9Z14PBF

Status
Active
Package
Tube
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
43W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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