IRFB4510GPBF

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Overview of IRFB4510GPBF

Part NumberIRFB4510GPBF
ManufacturerInfineon Technologies
DescriptionMOSFET N CH 100V 62A TO-220AB
DatasheetsDownload IRFB4510GPBF Datasheet PDFPDF Icon
Price for IRFB4510GPBF

Specification of IRFB4510GPBF

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
4V @ 100A
Gate Charge (Qg) (Max) @ Vgs
87 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3180 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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