IRFB9N65APBF-BE3

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Overview of IRFB9N65APBF-BE3

Part NumberIRFB9N65APBF-BE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 650V 8.5A TO220AB
DatasheetsDownload IRFB9N65APBF-BE3 Datasheet PDFPDF Icon
Price for IRFB9N65APBF-BE3

Specification of IRFB9N65APBF-BE3

Status
Active
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
930mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1417 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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