IRFM120A

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Overview of IRFM120A

Part NumberIRFM120A
ManufacturerFairchild Semiconductor
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload IRFM120A Datasheet PDFPDF Icon
Price for IRFM120A

Specification of IRFM120A

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 1.15A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
480 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223-4
Package / Case
TO-261-4, TO-261AA

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