IXFK170N10P

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Overview of IXFK170N10P

Part NumberIXFK170N10P
ManufacturerLittelfuse
DescriptionMOSFET N-CH 100V 170A TO264AA
DatasheetsDownload IXFK170N10P Datasheet PDFPDF Icon
Price for IXFK170N10P

Specification of IXFK170N10P

Status
Active
Series
HiPerFET™, Polar
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
198 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
715W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264AA (IXFK)
Package / Case
TO-264-3, TO-264AA

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