IXTA06N120P

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Overview of IXTA06N120P

Part NumberIXTA06N120P
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1200V 600MA TO263
DatasheetsDownload IXTA06N120P Datasheet PDFPDF Icon
Price for IXTA06N120P

Specification of IXTA06N120P

Status
Active
Series
Polar
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
32Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50A
Gate Charge (Qg) (Max) @ Vgs
13.3 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AA
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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