IXTA08N100P

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Overview of IXTA08N100P

Part NumberIXTA08N100P
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1000V 800MA TO263
DatasheetsDownload IXTA08N100P Datasheet PDFPDF Icon
Price for IXTA08N100P

Specification of IXTA08N100P

Status
Active
Series
Polar
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25C
800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 50A
Gate Charge (Qg) (Max) @ Vgs
11.3 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AA
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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