IXTD2N60P-1J

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Overview of IXTD2N60P-1J

Part NumberIXTD2N60P-1J
ManufacturerLittelfuse
DescriptionMOSFET N-CH 600V 2A DIE
Price for IXTD2N60P-1J

Specification of IXTD2N60P-1J

Status
Obsolete
Series
PolarHV™
Package
Bulk
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
56W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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