LSIC1MO120E0080

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Overview of LSIC1MO120E0080

Part NumberLSIC1MO120E0080
ManufacturerLittelfuse
DescriptionSICFET N-CH 1200V 39A TO247-3
DatasheetsDownload LSIC1MO120E0080 Datasheet PDFPDF Icon
Price for LSIC1MO120E0080

Specification of LSIC1MO120E0080

Status
Active
Package
Tube
Supplier
Littelfuse Inc.
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 20 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
1825 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55C ~ 150C
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3

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