MSCSM120HM16TBL3NG

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Overview of MSCSM120HM16TBL3NG

Part NumberMSCSM120HM16TBL3NG
ManufacturerMicrochip Technology
DescriptionPM-MOSFET-SIC-BL3
DatasheetsDownload MSCSM120HM16TBL3NG Datasheet PDFPDF Icon
Price for MSCSM120HM16TBL3NG

Specification of MSCSM120HM16TBL3NG

Status
Active
Package
Bulk
Supplier
Microchip Technology
Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (Phase Leg)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
150A
Rds On (Max) @ Id, Vgs
16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id
2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
6040pF @ 1000V
Power - Max
560W
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-

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