NDH8321C

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Overview of NDH8321C

Part NumberNDH8321C
ManufacturerFairchild Semiconductor
DescriptionP-CHANNEL MOSFET
DatasheetsDownload NDH8321C Datasheet PDFPDF Icon
Price for NDH8321C

Specification of NDH8321C

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
3.8A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs
35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
28nC @ 4.5V, 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 10V, 865pF @ 10V
Power - Max
800mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSOP (0.130", 3.30mm Width)
Supplier Device Package
SuperSOT-8

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