NTBG014N120M3P

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Overview of NTBG014N120M3P

Part NumberNTBG014N120M3P
Manufactureronsemi
DescriptionSIC MOSFET 1200 V 14 MOHM M3P SE
DatasheetsDownload NTBG014N120M3P Datasheet PDFPDF Icon
Price for NTBG014N120M3P

Specification of NTBG014N120M3P

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
104A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
20mOhm @ 74A, 18V
Vgs(th) (Max) @ Id
4.63V @ 37mA
Gate Charge (Qg) (Max) @ Vgs
337 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
6313 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
454W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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