NTBG020N090SC1

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Overview of NTBG020N090SC1

Part NumberNTBG020N090SC1
Manufactureronsemi
DescriptionSICFET N-CH 900V 9.8A/112A D2PAK
DatasheetsDownload NTBG020N090SC1 Datasheet PDFPDF Icon
Price for NTBG020N090SC1

Specification of NTBG020N090SC1

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25C
9.8A (Ta), 112A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 15 V
Vgs (Max)
+19V, -10V
Input Capacitance (Ciss) (Max) @ Vds
4415 pF @ 450 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 477W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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