NVH4L022N120M3S

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Overview of NVH4L022N120M3S

Part NumberNVH4L022N120M3S
Manufactureronsemi
DescriptionSIC MOS TO247-4L 22MOHM 1200V
DatasheetsDownload NVH4L022N120M3S Datasheet PDFPDF Icon
Price for NVH4L022N120M3S

Specification of NVH4L022N120M3S

Status
Active
Series
Automotive, AEC-Q101
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
151 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3175 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
352W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4

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