NXH010P90MNF1PTG

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Overview of NXH010P90MNF1PTG

Part NumberNXH010P90MNF1PTG
Manufactureronsemi
DescriptionPIM F1 SIC HALFBRIDGE 900V 10MOH
DatasheetsDownload NXH010P90MNF1PTG Datasheet PDFPDF Icon
Price for NXH010P90MNF1PTG

Specification of NXH010P90MNF1PTG

Status
Active
Package
Tray
Supplier
onsemi
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual) Common Source
FET Feature
-
Drain to Source Voltage (Vdss)
900V
Current - Continuous Drain (Id) @ 25C
154A (Tc)
Rds On (Max) @ Id, Vgs
14mOhm @ 100A, 15V
Vgs(th) (Max) @ Id
4.3V @ 40mA
Gate Charge (Qg) (Max) @ Vgs
546.4nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
7007pF @ 450V
Power - Max
328W (Tj)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-

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