NXPSC106506Q

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Overview of NXPSC106506Q

Part NumberNXPSC106506Q
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARB 650V 10A TO220AC
DatasheetsDownload NXPSC106506Q Datasheet PDFPDF Icon
Price for NXPSC106506Q

Specification of NXPSC106506Q

Status
Active
Package
Tube
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
250 A @ 650 V
Capacitance @ Vr, F
300pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220AC
Operating Temperature - Junction
175C (Max)

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